Processing a conventional magnetic bubble circuit with a 6-µm period

A conventional magnetic bubble memory with a 6-μm period and submicron details has been made. The memory is an 8-kbit shift register single-mask design with field access NiFe propagation elements. The transfer gates and detector area have an 8-μm period, while the major part of the storage loop has an enhanced density with a 6-μm period. The processing is done with a 1:1 electron image projector, which is capable of making the 0.75-μm smallest features necessary for this circuit. The fabrication uses a lift-off technology with Ti followed by a reactive sputter-etch procedure for the structuring of the NiFe elements.