• DocumentCode
    975534
  • Title

    Dual wavelength InGaAsP/Inp TJS lasers

  • Author

    Sakai, Shin´ichi ; Aoki, Toyohiro ; Umeno, Masayoshi

  • Author_Institution
    Nagoya Institute of Technology, Department of Engineering Science, Nagoya, Japan
  • Volume
    18
  • Issue
    1
  • fYear
    1982
  • Firstpage
    18
  • Lastpage
    20
  • Abstract
    InGaAsP/InP dual wavelength TJS lasers emitting at 1.17 ¿m and 1.3 ¿m wavelengths at room temperature are described. The threshold currents for both diodes are the same. The fabrication procedure and characteristics of the lasers are presented.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.17 microns wavelength; 1.3 microns wavelength; InGaAsP-InP laser; characteristics; dual wavelength TJS lasers; fabrication procedure; room temperature; semiconductor laser; threshold currents; transverse junction stripe laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820014
  • Filename
    4246188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975534