• DocumentCode
    975560
  • Title

    1.3¿m InGaAsP/InP light emitting diodes with internally defined emission area prepared by single-step LPE technique

  • Author

    Heinen, J.

  • Author_Institution
    Siemens AG, Research Laboratories, Mÿnchen, West Germany
  • Volume
    18
  • Issue
    1
  • fYear
    1982
  • Firstpage
    23
  • Lastpage
    24
  • Abstract
    An LPE single-step process is described for the fabrication of InGaAsP/InP double heterostructure surface emitting LEDs with internally defined emission area. The technique provides a simple production method which lends itself to simple upside-up mounting of LED chips and application of back surface mirrors for enhancement of light extraction efficiency.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; liquid phase epitaxial growth; semiconductor growth; 1.3 micro wavelength; InGaAsP-InP light emitting diode; LED; back surface mirrors; double heterostructure surface emitting LEDs; internally defined emission area; light extraction efficiency; single-step LPE technique; upside-up mounting;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820017
  • Filename
    4246191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975560