DocumentCode :
975812
Title :
A Defect Tolerance Scheme for Nanotechnology Circuits
Author :
Al-Yamani, Ahmad A. ; Ramsundar, Sundarkumar ; Pradhan, Dhiraj K.
Author_Institution :
King Fahd Univ. of Pet. & Minerals, Dhahran
Volume :
54
Issue :
11
fYear :
2007
Firstpage :
2402
Lastpage :
2409
Abstract :
Lithography-based integrated circuit fabrication is rapidly approaching its limit in terms of feature size. The current alternative is nanotechnology-based fabrication, which relies on self-assembly of nanotubes or nanowires. Such a process is subject to a high defect rate, which can be tolerated using carefully crafted defect tolerance techniques. This paper presents an algorithm for reconfiguration-based defect tolerance in nanotechnology switches. The algorithm offers an average switch density improvement of 50% to 100% to most recently published techniques. The algorithm is also consistent in improving the yield through minimizing false rejects as the results show over a large sample. The improvement percentage varies depending on the manufactured switch size and the desired defect-free size with the improvement in efficiency directly proportional to the size of the switch.
Keywords :
integrated circuit manufacture; lithography; nanoelectronics; nanotube devices; nanowires; defect tolerance scheme; lithography-based integrated circuit fabrication; nanotechnology circuits; nanotechnology switches; nanotechnology-based fabrication; nanotube self-assembly; nanowire self-assembly; reconfiguration-based defect tolerance; switch density; Circuits; Fabrication; Fault tolerance; Frequency estimation; Manufacturing; Nanotechnology; Nanowires; Self-assembly; Silicon; Switches; Cross bar switches; defect tolerance; fault tolerance; nanotechnology; reliability;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2007.907875
Filename :
4383231
Link To Document :
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