DocumentCode :
975848
Title :
Noise, responsivity and prospects for long-term stability of silicon reach-through avalanche photodiodes
Author :
Brain, M.C.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Volume :
18
Issue :
2
fYear :
1982
Firstpage :
65
Lastpage :
66
Abstract :
Approximately 100 silicon reach-through avalanche photo-diodes of three different types have been characterised for the dependence of noise and responsivity on bias voltage, to indicate margins to be allowed for variations between devices in optical systems operating at 0.85 ¿m wavelength. Long-term stability measurements reveal a correlation between reliability and production batch.
Keywords :
avalanche photodiodes; electron device noise; reliability; IR optical systems; Si reach-through avalanche photodiodes; bias voltage; long-term stability prospects; noise; photoelectric devices; reliability; responsivity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19820045
Filename :
4246220
Link To Document :
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