DocumentCode
975848
Title
Noise, responsivity and prospects for long-term stability of silicon reach-through avalanche photodiodes
Author
Brain, M.C.
Author_Institution
British Telecom Research Laboratories, Ipswich, UK
Volume
18
Issue
2
fYear
1982
Firstpage
65
Lastpage
66
Abstract
Approximately 100 silicon reach-through avalanche photo-diodes of three different types have been characterised for the dependence of noise and responsivity on bias voltage, to indicate margins to be allowed for variations between devices in optical systems operating at 0.85 ¿m wavelength. Long-term stability measurements reveal a correlation between reliability and production batch.
Keywords
avalanche photodiodes; electron device noise; reliability; IR optical systems; Si reach-through avalanche photodiodes; bias voltage; long-term stability prospects; noise; photoelectric devices; reliability; responsivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820045
Filename
4246220
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