• DocumentCode
    975848
  • Title

    Noise, responsivity and prospects for long-term stability of silicon reach-through avalanche photodiodes

  • Author

    Brain, M.C.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    18
  • Issue
    2
  • fYear
    1982
  • Firstpage
    65
  • Lastpage
    66
  • Abstract
    Approximately 100 silicon reach-through avalanche photo-diodes of three different types have been characterised for the dependence of noise and responsivity on bias voltage, to indicate margins to be allowed for variations between devices in optical systems operating at 0.85 ¿m wavelength. Long-term stability measurements reveal a correlation between reliability and production batch.
  • Keywords
    avalanche photodiodes; electron device noise; reliability; IR optical systems; Si reach-through avalanche photodiodes; bias voltage; long-term stability prospects; noise; photoelectric devices; reliability; responsivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820045
  • Filename
    4246220