Title :
Carrier-induced refractive-index change, mode gain and spontaneous-emission factor in AlGaInP SQW-SCH laser diodes
Author :
Tanaka, T. ; Minagawa, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
5/24/1990 12:00:00 AM
Abstract :
The carrier-induced refractive-index change, mode gain and spontaneous emission factor are evaluated for AlGaInP single-quantum-well laser diodes with separate-confinement heterostructures. The results are compared with those of AlGaInP double-heterostructure lasers. The values of the alpha parameters, defined as the ratio of the real part of the refractive index to the imaginary part of the refractive index, are estimated as 4.9 and 12.8.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; refractive index; semiconductor junction lasers; superradiance; AlGaInP; SQW-SCH laser diodes; TE mode; TM mode; alpha parameters; carrier-induced refractive-index change; double-heterostructure lasers; mode gain; semiconductor lasers; separate-confinement heterostructures; single-quantum-well; spontaneous-emission factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900501
