• DocumentCode
    975917
  • Title

    Enhanced low temperature diffusion of electron-beam evaporated aluminium into SiO2 thin films

  • Author

    Ragaie, H.F.

  • Author_Institution
    Ain Shams University, Faculty of Engineering Electronics & Computer Department, Cairo, Egypt
  • Volume
    18
  • Issue
    2
  • fYear
    1982
  • Firstpage
    74
  • Lastpage
    75
  • Abstract
    Aluminium-gate MOS capacitors are annealed at low temperatures. The consequent aluminium penetration into the underlying oxide is revealed by ion probing. Results indicate that penetration is enhanced when the aluminium is evaporated using an electron beam.
  • Keywords
    aluminium; diffusion in solids; impurity distribution; insulating thin films; metal-insulator-semiconductor structures; silicon compounds; Al-gate MOS capacitors; SiO2 thin films; diffusion in solids; electron-beam evaporated Al; enhanced low temperature diffusion; ion probing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820051
  • Filename
    4246226
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975917