Title :
Enhanced low temperature diffusion of electron-beam evaporated aluminium into SiO2 thin films
Author_Institution :
Ain Shams University, Faculty of Engineering Electronics & Computer Department, Cairo, Egypt
Abstract :
Aluminium-gate MOS capacitors are annealed at low temperatures. The consequent aluminium penetration into the underlying oxide is revealed by ion probing. Results indicate that penetration is enhanced when the aluminium is evaporated using an electron beam.
Keywords :
aluminium; diffusion in solids; impurity distribution; insulating thin films; metal-insulator-semiconductor structures; silicon compounds; Al-gate MOS capacitors; SiO2 thin films; diffusion in solids; electron-beam evaporated Al; enhanced low temperature diffusion; ion probing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820051
