• DocumentCode
    975926
  • Title

    Hole traps in n-type Ga1-xAlxAs grown by organometallic vapour phase epitaxy

  • Author

    Wu, R.H. ; Allsopp, Duncan ; Peaker, A.R.

  • Author_Institution
    University of Manchester Institute of Science & Technology, Manchester, UK
  • Volume
    18
  • Issue
    2
  • fYear
    1982
  • Firstpage
    75
  • Lastpage
    77
  • Abstract
    Minority carrier traps in n-type Ga1-xAlxAs (x = 0.25 and 0.30) grown by the organometallic vapour phase epitaxy process have been investigated by minority carrier transient spectroscopy (MCTS). Hole traps with thermal activation energies of Ev + 0.35 and 0.48 eV and a deeper centre have been observed in GaAs and at Ev + 0.20, 0.26, 0.44 and 0.78 in GaAlAs. The electron and hole capture cross-sections of these centres have also been measured.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; hole traps; minority carriers; semiconductor epitaxial layers; vapour phase epitaxial growth; GaAlAs; GaAs; III-V semiconductors; electron capture cross-sections; hole capture cross-sections; hole traps; minority carrier transient spectroscopy; minority carrier traps; n-type Ga1-xAlxAs; organometallic vapour phase epitaxy; thermal activation energies;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820052
  • Filename
    4246227
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975926