Title :
Low-threshold-current distributed-feedback InGaAsP/InP CW lasers
Author :
Akiba, Shigeyuki ; Utaka, K. ; Sakai, Kenji ; Matsushima, Y.
Author_Institution :
KDD Research & Development Laboratories, Tokyo, Japan
Abstract :
Distributed-feedback buried-heterostructure InGaAsP/InP lasers with room temperature CW threshold current as low as 50 mA, corresponding to a current density of 2.3 kA/cm2, are presented. CW operation in the temperature range from ¿20°C to 58°C was confirmed.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor junction lasers; -20 to 58 degrees C; CW lasers; III-V semiconductors; buried-heterostructure InGaAsP-InP lasers; distributed-feedback; low threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820053
