High performance GaAs MESFETs grown on InP substrates by MOCVD using tertiarybutylarsine

Author

Jeong, Joonsoo ; Lum, R.M. ; Klingert, J.K. ; Bylsma, R. ; Vella-Coleiro, G.P. ; Smith, Peter

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

26

Issue

7

fYear

1990

fDate

3/29/1990 12:00:00 AM

Firstpage

482

Lastpage

484

Abstract

Device performance of GaAs metal-semiconductor field effect transistors (MESFETs) grown by metalorganic chemical vapour deposition (MOCVD) on InP substrates using tertiarybutylarsine (t-BuAsH₂) is reported. The 1 mu m gate FETs have a maximum extrinsic transconductance of 135 mS/mm and an output transconductance of 5.5 mS/mm. A frequency of unity current gain of 11 GHz and a maximum frequency of oscillation of 22 GHz are obtained from S-parameter measurements. DC and microwave characteristics of t-BuAsH₂ grown GaAs MESFETs are comparable to those of GaAs MESFETs grown using AsH₃.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 1 micron; 11 GHz; 135 mS; 22 GHz; 5.5 mS; DC characteristics; GaAs-InP; III-V semiconductors; InP substrates; MESFETs; MOCVD; S-parameter measurements; SHF; field effect transistors; maximum extrinsic transconductance; metalorganic chemical vapour deposition; microwave characteristics; microwave transistors; output transconductance; tertiarybutylarsine;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900313

Filename

50244