Title :
Pseudomorphic GaInP Schottky Diode and MSM detector on InP
Author :
Lovaliche, S. ; Corre, A. Le ; Ginudi, A. ; Henry, L. ; Vaudry, C. ; Clerot, F.
Author_Institution :
CNET, Lannion, France
fDate :
3/29/1990 12:00:00 AM
Abstract :
A high gap pseudomorphic GaInP material is used to enhance the Schottky barrier height of InP. This material leads to a Schottky diode with a barrier height of 0.8 eV, with ideality factor close to one and breakdown voltages of 200 V on undoped n type material. This diode is used to fabricate an MSM detector on InP. The device of 4*4 mu m fingers and 40 mu m2 active surface presents a risetime of 74 ps and a FWHM of 183 ps.
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium compounds; gold; indium compounds; semiconductor junctions; semiconductor-metal boundaries; 0.8 eV; 183 ps; 200 V; 4 micron; 74 ps; Au-GaInP-InP; FWHM; MSM detector; Schottky barrier height; barrier height; breakdown voltages; high gap pseudomorphic GaInP material; ideality factor; pseudomorphic GaInP Schottky diode; risetime;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900316
