Title :
MBE-grown InGaAs/InP BH lasers with LPE burying layers
Author :
Kawamura, Y. ; Noguchi, Y. ; Asahi, H. ; Nagai, H.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
CW operation at up to 60°C at 1.65 ¿m has been achieved in MBE-grown InGaAs/InP buried-heterostructure lasers with LPE InP burying layers. Threshold current was as low as 35 mA at room temperature. No degradation was observed after 2800 h CW operation at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; 1.65 micron laser; CW operation; IR laser; InGaAs-InP BH lasers; LPE burying layers; MBE-grown; buried heterostructure laser; semiconductor junction lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820062
