• DocumentCode
    976015
  • Title

    MBE-grown InGaAs/InP BH lasers with LPE burying layers

  • Author

    Kawamura, Y. ; Noguchi, Y. ; Asahi, H. ; Nagai, H.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    18
  • Issue
    2
  • fYear
    1982
  • Firstpage
    91
  • Lastpage
    92
  • Abstract
    CW operation at up to 60°C at 1.65 ¿m has been achieved in MBE-grown InGaAs/InP buried-heterostructure lasers with LPE InP burying layers. Threshold current was as low as 35 mA at room temperature. No degradation was observed after 2800 h CW operation at room temperature.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; 1.65 micron laser; CW operation; IR laser; InGaAs-InP BH lasers; LPE burying layers; MBE-grown; buried heterostructure laser; semiconductor junction lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820062
  • Filename
    4246237
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976015