Title :
High-speed two-dimensional electron-gas FET logic
Author :
Tung, Pham N. ; Delagebeaudeuf, D. ; Laviron, M. ; Delescluse, P. ; Chaplart, J. ; Linh, Nuyen T.
Author_Institution :
Thomson-CSF, Central Research Laboratory, Orsay, France
Abstract :
Ring oscillators using planar enhancement-mode two-dimensional electron-gas FETs (TEGFETs) and ungated transistor loads are described. A propagation delay time of 19.1 ps has been measured at room temperature, the lowest yet reported for this temperature. Improvements on materials and circuit design should lead to a delay time of 10 ps at 300 K.
Keywords :
field effect devices; logic circuits; oscillators; circuit design; propagation delay time; ring oscillators; two-dimensional electron-gas FET logic; ungated transistor loads;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820073
