• DocumentCode
    976173
  • Title

    AlGaAs/GaAs JFETs by organo-metallic and molecular beam epitaxy

  • Author

    Maloney, T.J. ; Saxena, R.R. ; Chai, Y.G.

  • Author_Institution
    Varian Associates, Inc., Corporate Solid State Laboratory, Palo Alto, USA
  • Volume
    18
  • Issue
    3
  • fYear
    1982
  • Firstpage
    112
  • Lastpage
    113
  • Abstract
    Normally-off and normally-on AlGaAs/GaAs heterojunction gate GaAs FETs (HJFETs) for high-speed logic applications have been fabricated with molecular beam epitaxy (MBE) and organometallic vapour phase epitaxy (OM-VPE). The best normally-off devices used MBE n-GaAs active layers and OM-VPE gate layers of p+-AlGaAs and p+-GaAs. Saturation currents followed a square law and current scaling constants were the highest on record for HJFETs, greater than 50 ¿A/¿m-V2.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; junction gate field effect transistors; molecular beam epitaxial growth; p-n heterojunctions; AlGaAs-GaAs heterojunction gate JFETs; III-V semiconductors; current scaling constants; logic applications; molecular beam epitaxy; normally-off devices; organometallic vapour phase epitaxy; saturation currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820075
  • Filename
    4246251
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976173