Title :
New high-voltage CMOS technology
Author :
Jankovic, N.D. ; Popovic, Radivoje S.
Author_Institution :
Ei OOUR Fabrika poluprovodnika, Ni¿, Yugoslavia
Abstract :
A new high-voltage CMOS technology with operating range from 2 to 35 V is described. It is achieved using a new method of ohmic contact formation in combination with lightly doped n-channel source and drain MOS transistors. Only seven masking steps are required.
Keywords :
field effect integrated circuits; integrated circuit technology; ohmic contacts; 2 to 35 V; MOS transistors; high-voltage CMOS technology; lightly doped n-channel source; ohmic contact;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820077
