• DocumentCode
    976191
  • Title

    New high-voltage CMOS technology

  • Author

    Jankovic, N.D. ; Popovic, Radivoje S.

  • Author_Institution
    Ei OOUR Fabrika poluprovodnika, Ni¿, Yugoslavia
  • Volume
    18
  • Issue
    3
  • fYear
    1982
  • Firstpage
    115
  • Lastpage
    116
  • Abstract
    A new high-voltage CMOS technology with operating range from 2 to 35 V is described. It is achieved using a new method of ohmic contact formation in combination with lightly doped n-channel source and drain MOS transistors. Only seven masking steps are required.
  • Keywords
    field effect integrated circuits; integrated circuit technology; ohmic contacts; 2 to 35 V; MOS transistors; high-voltage CMOS technology; lightly doped n-channel source; ohmic contact;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820077
  • Filename
    4246253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976191