Stripe-geometry laser with in-situ ohmic contact and self-aligned native surface oxide mask for current isolation prepared by molecular beam epitaxy

A simple stripe-geometry laser is prepared by molecular beam epitaxy with an in-situ ohmic contact stripe and self-aligned native surface oxide mask for current isolation. The thresholds are about 70 mA for 5 ¿m-wide and 380 ¿m-long stripes. The light/current characteristics are linear up to ¿8¿10 mW/mirror with a spontaneous emission level at threshold of ¿0.3 mW/mirror. The temperature coefficient T0 measured for one wafer is as high as 255 K.