Title :
Compensation tendency of short-channel and narrow-channel effects in small-geometry IGFETs
Author :
Naem, A.A. ; Boothroyd, A.R.
Author_Institution :
Carleton University, Department of Electronics, Ottawa, Canada
Abstract :
Results of an experimental investigation of the interaction between short-channel and narrow-channel effects in small-geometry (simultaneously short- and narrow-channel) devices are presented. It is demonstrated that, for these devices, this interaction can have a beneficial influence on device characteristics, being responsible for a drastic reduction of punch-through and avalanche multiplication effects, as well as the compensation of opposing threshold voltage shift tendencies.
Keywords :
insulated gate field effect transistors; avalanche multiplication effects; compensation tendency; narrow-channel effects; punch-through; short channel effects; small-geometry IGFETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820090
