Compensation tendency of short-channel and narrow-channel effects in small-geometry IGFETs

Results of an experimental investigation of the interaction between short-channel and narrow-channel effects in small-geometry (simultaneously short- and narrow-channel) devices are presented. It is demonstrated that, for these devices, this interaction can have a beneficial influence on device characteristics, being responsible for a drastic reduction of punch-through and avalanche multiplication effects, as well as the compensation of opposing threshold voltage shift tendencies.