Continuous-wave operation of GaInAsSb-GaSb type-II ridge waveguide lasers emitting at 2.8 μm

Author

Rossner, K. ; Hummer, M. ; Lehnhardt, T. ; Muller, M. ; Forchel, A. ; Fischer, M. ; Koeth, J.

Author_Institution

Technische Phys., Wurzburg Univ.

Volume

18

Issue

13

fYear

2006

fDate

7/1/2006 12:00:00 AM

Firstpage

1424

Lastpage

1426

Abstract

We have realized compressively strained GaInAsSb-GaSb type-II double quantum-well lasers with an emission wavelength of 2.8 mum. Using broad area devices, an internal absorption of 9.8 cm^-1 and an internal quantum efficiency of 0.57 is determined. For the increase of the threshold current with temperature, a T₀ of 44 K is obtained. Narrow ridge waveguide lasers show continuous-wave laser operation at temperatures up to 45 degC, with room-temperature (RT) threshold current of 37 mA. At RT, the maximum optical output power per facet of an uncoated 800times7 mum² ridge waveguide laser exceeds 8 mW

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; stimulated emission; waveguide lasers; 2.8 mum; 293 to 298 K; 37 mA; 44 K; 45 degC; 7 mum; 800 mum; GaInAsSb-GaSb lasers; broad area devices; compressive strain; continuous-wave operation; double quantum-well lasers; internal absorption; internal quantum efficiency; ridge waveguide lasers; room temperature; type-II lasers; uncoated waveguide laser; Diode lasers; Distributed feedback devices; Gas lasers; Laser feedback; Optical waveguides; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Waveguide lasers; Antimonide-based lasers; GaInAsSb; continuous-wave (CW) operation; double quantum-well (DQW) lasers; midinfrared diode lasers; ridge waveguide (RWG) lasers; semiconductor lasers; type-II heterostructures;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.877232

Filename

1643244