An analytical two-dimensional model for silicon MESFETs

Author

Marshall, John D. ; Meindl, James D.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

35

Issue

3

fYear

1988

fDate

3/1/1988 12:00:00 AM

Firstpage

373

Lastpage

383

Abstract

A model that predicts small-geometry effects in Si MESFETs has been developed. It is based on a two-dimensional (2-D) analytical solution of Poisson´s equation in the subthreshold regime that applies to the junction-isolated structure typical of silicon devices. The model is in excellent agreement with numerical simulations from the PISCES 2-D device analysis program. The analytical model provides the physical basis for a subthreshold current model for small-geometry MESFETs. A scaling scheme for MESFETs, derived from the analytical model, that predicts a minimum-acceptable gate length of 0.15 μm for these devices is proposed

Keywords

Schottky gate field effect transistors; elemental semiconductors; semiconductor device models; silicon; 0.15 micron; MESFETs; PISCES 2D device analysis program; Poisson´s equation; Si; analytical two-dimensional model; junction-isolated structure; minimum-acceptable gate length; numerical simulations; scaling scheme; small-geometry MESFETs; subthreshold current model; subthreshold regime; Analytical models; Boundary conditions; Dielectric substrates; Electrostatics; FETs; MESFETs; P-n junctions; Silicon; Threshold voltage; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2464

Filename

2464