Title :
InGaAsP/InP LEDs integrated with monitoring detector
Author :
Sakai, Shin´ichi ; Aoki, Toyohiro ; Umeno, Masayoshi
Author_Institution :
Nagoya Institute of Technology, Department of Engineering Science, Nagoya, Japan
Abstract :
A novel structure for an integrated LED-detector device is fabricated. The conversion efficiency, defined by (detector short circuit current)/(current injected into the LED), reaches 27% and response time of 2.2 ns is obtained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; light emitting diodes; InGaAsP-InP LED; conversion efficiency; integrated LED-detector device; integrated optics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820108
