Title :
1/f noise interpretation of the effect of gate oxide nitridation and reoxidation in dielectric traps
Author :
Jayaraman, R. ; Sodini, C.G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fDate :
1/1/1990 12:00:00 AM
Abstract :
Nitrided gate oxides and reoxidized nitrided gate oxides exhibit increased reliability under electrical and radiation stress and improved dopant barrier properties. However, the process of nitridation introduces oxide charges and traps. In this paper, 1/f noise measurements in MOSFETs and the carrier number fluctuation (McWhorter) model are used to extract the dielectric trap density in space and energy near the conduction and valence band edges of silicon. It is found that reoxidation can be used to reduce nitridation induced interface traps to levels found in oxides
Keywords :
electric noise measurement; electron device noise; insulated gate field effect transistors; interface electron states; random noise; semiconductor device models; 1/f noise measurements; MOSFETs; McWhorter model; Si-SiOxNy; carrier number fluctuation model; conduction band; dielectric trap density; dopant barrier properties; electrical stress; gate oxide nitridation; nitridation; nitridation induced interface traps; oxide charges; radiation stress; reoxidized nitrided gate oxides; traps; valence band; Annealing; Data mining; Dielectrics; Electron traps; Fluctuations; Noise measurement; Silicon; Software performance; Stress; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
