Title :
High-speed NMOS operational amplifier fabricated using VLSI technology
Author :
Ishihara, Takuya ; Enomoto, Tetsuya ; Yasumoto, Masayoshi ; Aizawa, Takehiro
Author_Institution :
Nippon Electric Co. Ltd., Basic Technology Research Laboratories, Kawasaki, Japan
Abstract :
A small wideband NMOS operational amplifier for high-speed LSIs was fabricated using VLSI technology with a minimum channel width of 3 ¿m and minimum gate length of 4.5 ¿m. Results such as 0.062 mm2 silicon area, 66 dB DC open-loop gain, 9.6 MHz gain-bandwidth product, +13.8/¿19.3 V/¿s slew rates and about 200 ns settling time were successfully obtained. The technique to improve transient response is also discussed.
Keywords :
field effect integrated circuits; large scale integration; linear integrated circuits; operational amplifiers; transient response; wideband amplifiers; 200 ns settling time; 66 dB; 9.6 MHz gain-bandwidth product; DC open-loop gain; NMOS operational amplifier; VLSI technology; high-speed LSIs; slew rates; transient response; wideband amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820110
