• DocumentCode
    976539
  • Title

    Recrystallisation of CVD poly-Si on insulator by dual electron-beam processing

  • Author

    Davis, J.R. ; McMahon, R.A. ; Ahmed, H.

  • Author_Institution
    Cambridge University, Engineering Department, Cambridge, UK
  • Volume
    18
  • Issue
    4
  • fYear
    1982
  • Firstpage
    163
  • Lastpage
    164
  • Abstract
    Large areas of ¿100¿ oriented single-crystal films have been produced, using the lateral seeding technique, from polycrystalline silicon deposited on SiO2. One electron beam was used to provide generalised substrate heating, and another swept a localised molten zone in the deposited silicon.
  • Keywords
    CVD coatings; electron beam applications; elemental semiconductors; recrystallisation; semiconductor growth; silicon; CVD poly-Si on insulator; SiO2; dual electron-beam processing; lateral seeding technique; localised molten zone; polycrystalline Si; recrystallisation; semiconductor growth; single-crystal films; substrate heating;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820112
  • Filename
    4246289
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976539