Title :
Recrystallisation of CVD poly-Si on insulator by dual electron-beam processing
Author :
Davis, J.R. ; McMahon, R.A. ; Ahmed, H.
Author_Institution :
Cambridge University, Engineering Department, Cambridge, UK
Abstract :
Large areas of ¿100¿ oriented single-crystal films have been produced, using the lateral seeding technique, from polycrystalline silicon deposited on SiO2. One electron beam was used to provide generalised substrate heating, and another swept a localised molten zone in the deposited silicon.
Keywords :
CVD coatings; electron beam applications; elemental semiconductors; recrystallisation; semiconductor growth; silicon; CVD poly-Si on insulator; SiO2; dual electron-beam processing; lateral seeding technique; localised molten zone; polycrystalline Si; recrystallisation; semiconductor growth; single-crystal films; substrate heating;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820112
