Title :
Punch-through technique for charge collection in an extrinsic Si IRCCD
Author :
Brotherton, S.D. ; Gill, Akshay ; Shannon, John M. ; Parker, Gregory J.
Author_Institution :
Philips Research Laboratories, Redhill, UK
Abstract :
A compact punch-through charge collection structure, suitable for incorporation into an extrinsic silicon infra-red imaging CCD, is described. The operation of the structure is demonstrated using a 16-bit surface channel CCD fabricated in an n-epitaxial layer on an indium-doped substrate.
Keywords :
charge-coupled device circuits; infrared imaging; silicon; 16-bit surface channel CCD; IR imaging; In doped substrate; charge collection; extrinsic Si IRCCD; infra-red imaging CCD; n-epitaxial layer; punch through technique; thermal imaging;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820115
