Title :
High-efficiency millimetre-wave InP TEOs made by liquid phase epitaxy
Author :
Yen, K.H. ; Berenz, J.J.
Author_Institution :
TRW Defense & Space Systems, Redondo Beach, USA
Abstract :
High-efficiency millimetre-wave InP TEOs have been made using epitaxial material grown by liquid phase epitaxy. 417 mW has been achieved at 34 GHz with 7.6% efficiency.
Keywords :
Gunn oscillators; III-V semiconductors; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 34 GHz; Gunn oscillator; InP; high efficiency MM wave TEO; liquid phase epitaxy; microwave oscillator; semiconductor; transferred electron oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820118
