Title :
AlGaAs/GaAs microcleaved facet (MCF) laser monolithically integrated with photodiode
Author :
Wada, O. ; Yamakoshi, S. ; Fujii, T. ; Hiyamizu, S. ; Sakurai, T.
Author_Institution :
Fujitsu Laboratories Ltd., Optical Semiconductor Devices Laboratory, Kawasaki, Japan
Abstract :
A new AlGaAs/GaAs double-heterostructure laser with microcleaved facets, restricted just at stripe contact edges, has been developed. This laser and a junction photodiode have been monolithically integrated in a single GaAs substrate. Low-threshold current lasing and high-fidelity monitoring characteristics have been demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; photodiodes; semiconductor junction lasers; AlGaAs/GaAs double-heterostructure laser; III-V semiconductors; high-fidelity monitoring characteristics; integrated optics; junction photodiode; low-threshold current; microcleaved facets; stripe contact edges;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820130
