Title :
A sub- and near-threshold current model for silicon MESFETs
Author :
Marshall, John D. ; Meindl, James D.
Author_Institution :
Stanford Univ., CA, USA
fDate :
3/1/1988 12:00:00 AM
Abstract :
An analytical model for silicon MESFETs that predicts static current-voltage characteristics continuously from subthreshold through above-threshold operation has been developed. The model is based on an expression for the channel charge density derived from an analytical solution of Poisson´s equation in one dimension including mobile electrons and holes. The closed-form current model is verified with measured data in all regimes of operation
Keywords :
Schottky gate field effect transistors; elemental semiconductors; semiconductor device models; silicon; 1D solution; MESFETs; Poisson´s equation; Si; analytical model; channel charge density; closed-form current model; mobile electrons; mobile holes; near-threshold current model; static current-voltage characteristics; subthreshold; Analytical models; Charge carrier processes; Current-voltage characteristics; Digital circuits; Doping profiles; Electron mobility; Logic gates; MESFETs; Poisson equations; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
