DocumentCode
976725
Title
A two-dimensional analytical model of threshold voltages of short-channel MOSFETs with Gaussian-doped channels
Author
DasGupta, A. ; Lahiri, S.K.
Author_Institution
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Volume
35
Issue
3
fYear
1988
fDate
3/1/1988 12:00:00 AM
Firstpage
390
Lastpage
392
Abstract
A two-dimensional analytical model for the threshold voltage of a short-channel MOSFET with a Gaussian-doped channel has been developed. The Gaussian profile has been simulated by a novel integrable function. This makes possible a purely analytical solution of the two-dimensional Poissons equation in the channel region of the MOSFET
Keywords
insulated gate field effect transistors; semiconductor device models; Gaussian-doped channels; channel region; integrable function; short-channel MOSFET; threshold voltages; two-dimensional Poissons equation; two-dimensional analytical model; Analytical models; Doping profiles; Electron devices; Gaussian processes; Geometry; MESFETs; MOSFETs; Semiconductor process modeling; Silicon; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2468
Filename
2468
Link To Document