Title :
A two-dimensional analytical model of threshold voltages of short-channel MOSFETs with Gaussian-doped channels
Author :
DasGupta, A. ; Lahiri, S.K.
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
fDate :
3/1/1988 12:00:00 AM
Abstract :
A two-dimensional analytical model for the threshold voltage of a short-channel MOSFET with a Gaussian-doped channel has been developed. The Gaussian profile has been simulated by a novel integrable function. This makes possible a purely analytical solution of the two-dimensional Poissons equation in the channel region of the MOSFET
Keywords :
insulated gate field effect transistors; semiconductor device models; Gaussian-doped channels; channel region; integrable function; short-channel MOSFET; threshold voltages; two-dimensional Poissons equation; two-dimensional analytical model; Analytical models; Doping profiles; Electron devices; Gaussian processes; Geometry; MESFETs; MOSFETs; Semiconductor process modeling; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
