• DocumentCode
    976739
  • Title

    1/|f|α noise suppression in front-end readout pulse amplifiers

  • Author

    Wulleman, J.

  • Author_Institution
    Interuniversitary Inst. for High Energies, Free Univ. Brussels
  • Volume
    32
  • Issue
    12
  • fYear
    1996
  • fDate
    6/6/1996 12:00:00 AM
  • Firstpage
    1089
  • Lastpage
    1090
  • Abstract
    Based on a previous design (see ibid., vol. 32, no. 10, p. 934-5, 1996), an improved low powered, high gain amplifier for capacitive detector front-end read-out is discussed. The optimised amplifier´s 1/|f|α noise is strongly suppressed. The circuit has a differential gain of >500 mV/4fC, an average 10/90% rise time of 150 ns (with Ct=8pF), a noise figure of 562⊕28.Ct electrons e¯, and a power consumption of 650 μW. The circuit was simulated in the radiation hard SOI BiCMOS technology of DMILL
  • Keywords
    BiCMOS analogue integrated circuits; integrated circuit noise; interference suppression; nuclear electronics; pulse amplifiers; radiation hardening (electronics); silicon-on-insulator; 1/f noise suppression; 150 ns; 650 muW; DMILL; Si; capacitive detector; differential gain; front-end readout pulse amplifiers; low powered high gain amplifier; radiation hard SOI BiCMOS technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960713
  • Filename
    502868
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976739