Ion-implantation conditions and annealing effects for contiguous disk bubble devices

Author

Hirko, R. ; Ju, K.

Author_Institution

IBM Research Laboratory, San Jose, California

Volume

16

Issue

5

fYear

1980

fDate

9/1/1980 12:00:00 AM

Firstpage

958

Lastpage

960

Abstract

A systematic study of the anisotropy field change ( $\\Delta H_{k}$ ) in magnetic garnet films under various ion-implantation and annealing conditions was performed. For most ions the maximum $\\Delta H_{k}$ which could be obtained with the materials used was about 3000 Oe. However for hydrogen ion implantation the measured value showed no such saturation effect up through the highest damage level employed (2.0 eV/Å³) at which point $\\Delta H_{k}$ was 16500 Oe. Multiple ion implantation with mixtures of hydrogen and limited amounts of heavier ions (e.g. He or B) yielded values of $\\Delta H_{k}$ well beyond the saturation values seen with the heavier ions alone. Post annealing propagation margins of 16% of mid-bias for propagation patterns having a cell size of 30 μm²were measured.

Keywords

Magnetic bubble devices; Magnetic thermal factors; Anisotropic magnetoresistance; Annealing; Garnet films; Hydrogen; Ion implantation; Magnetic anisotropy; Magnetic field measurement; Magnetic materials; Perpendicular magnetic anisotropy; Saturation magnetization;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.1980.1060787

Filename

1060787