Title :
Simple backgated MOSFET structure for dynamic threshold control in fully depleted SOI CMOS
Author :
Tarr, N.G. ; Soreefan, R. ; MacElwee, T.W. ; Snelgrove, W.M. ; Bazarjani, S.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
fDate :
6/6/1996 12:00:00 AM
Abstract :
A simple junction-isolated backgate electrode, formed by boron implantation through the buried oxide, is shown to provide effective dynamic control of device thresholds in fully depleted SOI CMOS for ≃1 V power supply operation
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit technology; ion implantation; silicon-on-insulator; 1 V; B implantation; Si:B; backgated MOSFET structure; buried oxide; dynamic threshold control; fully depleted SOI CMOS; junction-isolated backgate electrode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960739
