Title :
Folded-cavity surface-emitting InGaAs-GaAs lasers with low-threshold current density and high efficiency
Author :
Yong Cheng ; Gye Mo Yang ; Dapkus, P.D.
Author_Institution :
Nat. Center for Integrated Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Folded-cavity surface-emitting InGaAs-GaAs lasers (FCSELs) that employ high-quality internal 45/spl deg/ deflectors are demonstrated with low-threshold current density and high efficiency. A simplified process involving a stop etch to position the surface emitting output mirror close to the waveguide and ion-beam-etching (IBE) to form the 45/spl deg/ deflecting mirror is presented. FCSELs (cavity length 800 μm) with two 45/spl deg/ deflectors, are obtained with threshold current density as low as 112.5 A/cm2 and surface-emission external quantum efficiency as high as 65% (0.82 W/A). The additional loss contributed by the folded-cavity design is estimated as 4.2 cm/sup -1/.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; optical deflectors; optical losses; quantum well lasers; sputter etching; surface emitting lasers; 65 percent; 800 mum; InGaAs-GaAs; additional loss; cavity length; far field profiles; folded-cavity surface-emitting InGaAs-GaAs lasers; high efficiency; high-quality internal 45/spl deg/ deflectors; ion-beam-etching; stop etch; surface emitting output mirror positioning; surface-emission external quantum efficiency; symmetric SQW graded-index separate-confinement heterojunction; threshold current density; top waveguide layer; Chemical lasers; Current density; Etching; Gallium arsenide; Identity-based encryption; Mirrors; Surface emitting lasers; Surface waves; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
