DocumentCode
976828
Title
Novel deposit/spin waveguide interconnection (DSWI) technique for semiconductor integrated optics
Author
Furuya, K. ; Miller, B.I. ; Coldren, L.A. ; Howard, R.E.
Author_Institution
Bell Laboratories, Holmdel, USA
Volume
18
Issue
5
fYear
1982
Firstpage
204
Lastpage
205
Abstract
We propose an efficient and simple optical interconnection between active semiconductor components by deposition and spin coating. The demonstration shows a low-threshold (2.0 kA/cm2) and high-coupling (81%) operation of a laser-polyimide/SiO2 slab waveguide integrated on a GaInAsP/InP chip.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; GaInAsP/InP chip; III-V semiconductor; active semiconductor components; deposit/spin waveguide interconnection; deposition; integrated optics; laser-polyimide/SiO2 slab waveguide; optical interconnection; spin coating;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820140
Filename
4246318
Link To Document