Title :
Low-temperature (10-300 K) characterization of MOVPE-grown vertical-cavity surface-emitting lasers
Author :
Hornak, L.A. ; Barr, J.C. ; Cox, W.D. ; Brown, K.S. ; Morgan, R.A. ; Hibbs-Brenner, M.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., West Virginia Univ., Morgantown, WV, USA
Abstract :
Experimental results from the low-temperature characterization of AlGaAs-based, MOVPE-grown VCSEL´s are reported. Evaluations focus on 830-nm (300 K) wavelength devices, showing continuous lasing over the entire 300-10 K measurement range with threshold currents from 3.6 mA (300 K) to 10.7 mA (10 K), and an /spl ap/0.6 /spl Aring///spl deg/C wavelength shift. Gain-resonance alignment for 830-nm devices occurred between 200-225 K with 1.6 mA minimum threshold current at 1.6 V. 817-nm VCSEL´s with 4.5 mA threshold at 300 K achieved submilliamp (0.8 mA) minimum threshold current near 125 K, representing a record low threshold current density of 250 A/cm/sup 2/.<>
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; semiconductor growth; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth; 0.8 mA; 1.6 V; 1.6 mA; 10 to 300 K; 3.6 to 10.7 mA; 817 nm; 830 nm; AlGaAs-GaAs; I-V characteristics; MOVPE growth; continuous lasing; gain-resonance alignment; low threshold current density; low-temperature characterization; output wavelength; submilliamp minimum threshold current; threshold currents; vertical-cavity surface-emitting lasers; wavelength shift; Current measurement; Optical computing; Optical surface waves; Packaging; Resonance; Surface emitting lasers; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
