• DocumentCode
    976840
  • Title

    1.3 μm laser diodes with butt-jointed selectively grown spot-size converters uniformly fabricated on a 2 in InP substrate

  • Author

    Okamoto, H. ; Suzaki, Y. ; Tohmori, Y. ; Okamoto, M. ; Kondo, Y. ; Kadota, Y. ; Yamamoto, M. ; Kishi, K. ; Sakai, Y. ; Wada, M. ; Nakao, M. ; Itaya, Y.

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa, Japan
  • Volume
    32
  • Issue
    12
  • fYear
    1996
  • fDate
    6/6/1996 12:00:00 AM
  • Firstpage
    1099
  • Lastpage
    1101
  • Abstract
    1.3 μm laser diodes with butt-jointed selectively grown spot-size converters have been successfully fabricated on a 2 in InP substrate. Their threshold current and far-field patterns were uniformly distributed over the 2 in wafer. These uniform characteristics were obtained by combining uniform MOVPE growth, wet etching, and CH4 /H2 reactive ion etching
  • Keywords
    III-V semiconductors; etching; indium compounds; optical fabrication; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 micron; 2 in; InP; InP substrate; butt-jointed spot-size converters; fabrication; far-field pattern; laser diodes; reactive ion etching; selective MOVPE growth; threshold current; uniformity; wet etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960741
  • Filename
    502876
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976840