Title :
1.3 μm laser diodes with butt-jointed selectively grown spot-size converters uniformly fabricated on a 2 in InP substrate
Author :
Okamoto, H. ; Suzaki, Y. ; Tohmori, Y. ; Okamoto, M. ; Kondo, Y. ; Kadota, Y. ; Yamamoto, M. ; Kishi, K. ; Sakai, Y. ; Wada, M. ; Nakao, M. ; Itaya, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
6/6/1996 12:00:00 AM
Abstract :
1.3 μm laser diodes with butt-jointed selectively grown spot-size converters have been successfully fabricated on a 2 in InP substrate. Their threshold current and far-field patterns were uniformly distributed over the 2 in wafer. These uniform characteristics were obtained by combining uniform MOVPE growth, wet etching, and CH4 /H2 reactive ion etching
Keywords :
III-V semiconductors; etching; indium compounds; optical fabrication; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 micron; 2 in; InP; InP substrate; butt-jointed spot-size converters; fabrication; far-field pattern; laser diodes; reactive ion etching; selective MOVPE growth; threshold current; uniformity; wet etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960741
