Excess intensity noise originated from polarization fluctuation in vertical-cavity surface-emitting lasers

Author

Mukaihara, T. ; Ohnoki, N. ; Hayashi, Y. ; Hatori, N. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

7

Issue

10

fYear

1995

Firstpage

1113

Lastpage

1115

Abstract

We have observed an excess-intensity noise that is attributed to polarization fluctuations of InGaAs-GaAs vertical-cavity surface-emitting lasers (VCSELs). It was observed, for the first time, that the intensity noise increased remarkably by the polarization fluctuation even when the single transverse mode operation was maintained. This result indicates that it is necessary to control the polarization state of VCSELs as well as control the transverse modes for low-noise operations.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser modes; laser noise; light polarisation; quantum well lasers; semiconductor device noise; surface emitting lasers; InGaAs-GaAs; InGaAs-GaAs vertical-cavity surface-emitting lasers; VCSEL; excess-intensity noise; light-current characteristics; low-noise operation; polarization fluctuation; polarization state control; quantum well active region; single transverse mode operation; transverse mode control; Distributed Bragg reflectors; Fluctuations; Laser modes; Laser noise; Optical noise; Optical polarization; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.466560

Filename

466560