DocumentCode
976851
Title
Low-frequency emissions from deep levels in GaAs MESFETs
Author
Das, M.B. ; Ghosh, P.K.
Author_Institution
Pennsylvania State University, Department of Electrical Engineering, Solid State Device Laboratory & Materials Research Laboratory, University Park, USA
Volume
18
Issue
5
fYear
1982
Firstpage
207
Lastpage
208
Abstract
Low-frequency natural oscillations have been observed in ion-implanted GaAs test MESFETs based on undoped LEC grown semi-insulating substrates that originate from deep levels.
Keywords
III-V semiconductors; Schottky gate field effect transistors; deep levels; gallium arsenide; III-V semiconductor; deep levels; low-frequency emission; semi-insulating substrates;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820142
Filename
4246320
Link To Document