Title :
Low-frequency emissions from deep levels in GaAs MESFETs
Author :
Das, M.B. ; Ghosh, P.K.
Author_Institution :
Pennsylvania State University, Department of Electrical Engineering, Solid State Device Laboratory & Materials Research Laboratory, University Park, USA
Abstract :
Low-frequency natural oscillations have been observed in ion-implanted GaAs test MESFETs based on undoped LEC grown semi-insulating substrates that originate from deep levels.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; deep levels; gallium arsenide; III-V semiconductor; deep levels; low-frequency emission; semi-insulating substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820142
