A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure

Author

Ishibashi, Tadao ; Yamauchi, Yoshiki

Author_Institution

Electr. Commun. Labs., NTT, Kanagawa, Japan

Volume

35

Issue

4

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

401

Lastpage

404

Abstract

An AlGaAs/GaAs heterojunction bipolar transistor (HBT) structure with an n-p⁺₁-i-p⁺₂-n⁺ doping profile that enables electron collection in the Γ-valley of GaAs is presented. In fabricated HBTs operating at low collector current density, f_T reaches its peak value when the potential variation in the i collector layer is around 0.4 V, which indicates that the electron transport is dominated by the Γ-valley feature in GaAs. A high f_T value of 105 GHz obtained at a collector current density of 5×10⁴ A/cm² also demonstrates the significance of the proposed near-ballistic collection structure

Keywords

III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; high field effects; semiconductor junctions; Γ-valley; 105 GHz; AlGaAs-GaAs; HBT; collector current density; electron collection; electron transport; heterojunction bipolar transistor; low collector current density; modified collector structure; n-p⁺₁-i-p⁺₂-n⁺ doping profile; near-ballistic collection structure; Acceleration; Ballistic transport; Current density; Cutoff frequency; Doping profiles; Electrons; FETs; Gallium arsenide; Heterojunction bipolar transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2471

Filename

2471