DocumentCode
976860
Title
Calculation of I/V characteristics for ion-implanted GaAs MESFETs
Author
McIntyre, N.
Author_Institution
British Telecom Research Laboratories, Ipswich, UK
Volume
18
Issue
5
fYear
1982
Firstpage
208
Lastpage
210
Abstract
The DC characteristics of an ion-implanted MESFET have been calculated from theoretical and measured carrier concentration profiles. The calculation allows the determination of characteristics for planar or recessed gate structures and shows good agreement with experimental devices.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; DC characteristics; I-V characteristics; III-V semiconductor; carrier concentration profiles; ion-implanted GaAs MESFETs;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820143
Filename
4246321
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