Low threshold current density operation of GaInAsP-InP laser with multiple reflector microcavities

Author

Ki-Chul Shin ; Tamura, M. ; Kasukawa, A. ; Serizawa, N. ; Kurihashi, S. ; Tamura, S. ; Arai, S.

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

Volume

7

Issue

10

fYear

1995

Firstpage

1119

Lastpage

1121

Abstract

We propose and demonstrate a new type of semiconductor laser having multiple reflector microcavities for the purpose of low threshold current operation. Very uniform multiple reflector microcavity structure was fabricated by electron beam (EB) lithography and selective wet chemical etching. Due to multiple reflection effect, threshold current density as low as 310 A/cm² (threshold current of 30 mA) was obtained at room temperature with the total cavity length of 64 μm and the cavity width of 200 μm.

Keywords

III-V semiconductors; current density; electron beam lithography; etching; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical fabrication; quantum well lasers; 200 mum; 30 mA; 64 mum; GaInAsP-InP; GaInAsP-InP laser; cavity width; electron beam lithography; low threshold current density operation; multiple reflection effect; multiple reflector microcavities; room temperature; selective wet chemical etching; semiconductor laser; threshold current; threshold current density; total cavity length; very uniform multiple reflector microcavity structure fabrication; Chemical lasers; Electron beams; Laser modes; Laser theory; Lithography; Microcavities; Quantum well lasers; Surface emitting lasers; Threshold current; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.466562

Filename

466562