DocumentCode :
976870
Title :
Optical phase modulation in an injection locked AlGaAs semiconductor laser
Author :
Kobayashi, S. ; Kimura, T.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume :
18
Issue :
5
fYear :
1982
Firstpage :
210
Lastpage :
211
Abstract :
Optical phase modulation by injecting coherent CW light into a directly frequency modulated semiconductor laser is reported. Phase modulation was obtained at up to 800 MHz modulation frequency without distortion for a 1.6 GHz full locking bandwidth. A static phase shift of ¿ took place with a 0.48 mA bias current change in the injection locked laser. Experimental and theoretical results showed that the product of the normalised phase deviation by the frequency deviation and the cutoff modulation frequency is constant.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical modulation; phase modulation; semiconductor junction lasers; 1.6 GHz; 800 MHz; III-V semiconductor; coherent CW light; injection locked AlGaAs semiconductor laser; normalised phase deviation; optical phase modulation; static phase shift;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19820144
Filename :
4246322
Link To Document :
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