Title :
Large-area low-frequency discharge-produced a-Si:H
Author :
Smith, G.J. ; Milne, W.I. ; Blackborow, P.
Author_Institution :
Cambridge University, Engineering Laboratory, Cambridge, UK
Abstract :
Using a capacitive glow discharge process at 380 kHz, very-large-area uniform films of a a-Si:H (60 cm diameter) have been deposited. The thickness uniformity, activated conductivity, photoconductivity and photoinduced effects in these films are discussed.
Keywords :
amorphous semiconductors; electrical conductivity of amorphous semiconductors and insulators; elemental semiconductors; glow discharges; hydrogen; photoconductivity; semiconductor doping; semiconductor growth; silicon; vacuum deposition; 380 kHz; a-Si:H; activated conductivity; amorphous semiconductors; capacitive glow discharge process; elemental semiconductor; photoconductivity; photoinduced effects; thickness uniformity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820145
