DocumentCode
976883
Title
Electron mobility in degenerate tellurium doped In0.53Ga0.47As LPE layers
Author
Claxton, P.A. ; Shirafuji, J. ; Houston, P.A. ; Robson, P.N.
Author_Institution
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Volume
18
Issue
5
fYear
1982
Firstpage
213
Lastpage
214
Abstract
Tellurium doped In0.53Ga0.47As epitaxial layers have been grown by LPE in the range n=1018¿4×1019 cm¿3; the distribution coefficient of tellurium was found to be 0.1. These layers exhibit a two to three times higher mobility than InP or GaAs doped to the same level. Theoretically calculated values of mobility taking account of the degenerate and nonparabolic conduction band conditions are compared with the experimental data.
Keywords
III-V semiconductors; carrier mobility; degenerate semiconductors; electronic conduction in crystalline semiconductor thin films; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor doping; semiconductor epitaxial layers; tellurium; III-V semiconductors; In0.53Ga0.47As:Te LPE layers; degenerate conduction band; distribution coefficient; electron mobility; nonparabolic conduction band;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820146
Filename
4246324
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