Title :
Bistable characteristics and all-optical set-reset operations of 1.55-μm two-segment strained multiquantum-well DFB lasers
Author :
Zhou, J. ; Cada, M. ; Li, G.P. ; Makino, T.
Author_Institution :
Dept. of Electr. Eng., Tech. Univ. Nova Scotia, Halifax, NS, Canada
Abstract :
Bistable characteristics and all-optical set-reset operations in 1.55-μm two-segment InGaAsP-InP strained multiquantum-well (MQW) DFB lasers were studied. An extinction ratio as high as 20 dB with a lasing output power of 4 mW was obtained, partially due to the dispersion effect of strained MQW DFB structures. The detailed transient dynamics of the optical set-reset operations were observed for the first time, with optical injection from a single-mode laser, implying a potential for high-speed applications. A switch-on time in subnanosecond region and a switch-off time of 2.5 ns were measured using input pulses with a peak power of 500 μW.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser modes; optical bistability; optical dispersion; optical logic; optical switches; quantum well lasers; 1.55 mum; 2.5 ns; 4 mW; 500 muW; InGaAsP-InP; MQW DFB lasers; all-optical set-reset operations; bistable characteristics; detailed transient dynamics; dispersion effect; extinction ratio; high-speed applications; input pulses; lasing output power; optical injection; peak power; single-mode laser; subnanosecond region; switch-off time; switch-on time; two-segment InGaAsP-InP strained multiquantum-well DFB lasers; two-segment strained multiquantum-well DFB lasers; Dispersion; Extinction ratio; High speed optical techniques; Optical bistability; Optical pulses; Power generation; Power measurement; Pulse measurements; Quantum well devices; Time measurement;
Journal_Title :
Photonics Technology Letters, IEEE
