DocumentCode
976893
Title
Optimisation of implantation conditions for the formation of buried SiO2 layers in silicon
Author
Mossadeq, H. ; Bennett, R.J. ; Anand, K.V.
Author_Institution
University of Kent at Canterbury, Electronics Laboratories, Canterbury, UK
Volume
18
Issue
5
fYear
1982
Firstpage
215
Lastpage
216
Abstract
The substrate temperature dependence of the IR transmission spectra of buried silicon dioxide layers formed by high dose ion implantation (~1017) was investigated for an ion dose ranging from 1017 to 1018 ions/cm2 at 250°C of 16O+ at 100 keV energy. The IR spectra indicate that the silicon/silicon-dioxide/silicon can be obtained after thermal annealing treatment of the implanted sample for 10 mm in hydrogen ambient at 1100°C.
Keywords
annealing; elemental semiconductors; infrared spectra of inorganic solids; ion implantation; semiconductor doping; silicon; silicon compounds; IR transmission spectra; LSI; O16+; Si; Si-SiO2-Si; buried SiO2 layers; elemental semiconductors; ion dose; ion implantation; optimisation; substrate temperature dependence; thermal annealing treatment;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820147
Filename
4246325
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