Strain effects on InGaP-InGaAsP-GaAsP tensile strained quantum-well lasers

Author

Uppal, Kushant ; Mathur, Atul ; Dapkus, P.D.

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

7

Issue

10

fYear

1995

Firstpage

1128

Lastpage

1130

Abstract

Tensile strained InGaP-InGaAsP-GaAsP single quantum well broad area lasers have been grown by metalorganic chemical vapor deposition and the effects of strain on the device parameters have been studied. The lasing mode is found to be TE for a strain of -0.46% and TM for a strain of -0.71%. The role of barrier height in controlling gain and temperature dependence in this system is measured. A low threshold current density of 221 A/cm/sup 2/ has been obtained for a cavity length of 2.34 mm with -0.46% strain.<>

Keywords

III-V semiconductors; chemical vapour deposition; current density; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; quantum well lasers; semiconductor growth; 2.34 mm; InGaP-InGaAsP-GaAsP; InGaP-InGaAsP-GaAsP tensile strained quantum-well lasers; TE laser modes; TM laser modes; barrier height; cavity length; device parameters; gain dependence; lasing mode; low threshold current density; metalorganic chemical vapor deposition; single quantum well broad area lasers; strain effects; temperature dependence; Capacitive sensors; Chemical lasers; Chemical vapor deposition; Control systems; Laser modes; Quantum well lasers; Quantum wells; Tellurium; Temperature control; Tensile strain;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.466565

Filename

466565