Title :
Shortest wavelength semiconductor laser diode
Author :
Akasaki, I. ; Sota, S. ; Sakai, H. ; Tanaka, T. ; Koike, M. ; Amano, H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan
fDate :
6/6/1996 12:00:00 AM
Abstract :
A group III nitride based separate confinement heterostructure (SCH) single quantum well (SQW) structure, with an active layer thickness as small as 1.5 nm, was fabricated. It shows the shortest lasing from semiconductor lasers by current injection at room temperature to date. Line width is as little as 0.15 nm
Keywords :
quantum well lasers; 376 nm; current injection; group III nitride; line width; semiconductor laser diode; separate confinement heterostructure single quantum well structure; ultraviolet lasing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960743
