• DocumentCode
    976899
  • Title

    Shortest wavelength semiconductor laser diode

  • Author

    Akasaki, I. ; Sota, S. ; Sakai, H. ; Tanaka, T. ; Koike, M. ; Amano, H.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan
  • Volume
    32
  • Issue
    12
  • fYear
    1996
  • fDate
    6/6/1996 12:00:00 AM
  • Firstpage
    1105
  • Lastpage
    1106
  • Abstract
    A group III nitride based separate confinement heterostructure (SCH) single quantum well (SQW) structure, with an active layer thickness as small as 1.5 nm, was fabricated. It shows the shortest lasing from semiconductor lasers by current injection at room temperature to date. Line width is as little as 0.15 nm
  • Keywords
    quantum well lasers; 376 nm; current injection; group III nitride; line width; semiconductor laser diode; separate confinement heterostructure single quantum well structure; ultraviolet lasing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960743
  • Filename
    502880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976899