Title :
Electron-irradiated extrinsic silicon detectors for 3¿5 ¿m focal-plane arrays
Author :
Maher, E.F. ; Eddolls, D.V. ; Holeman, B.R. ; Humphreys, R.G.
Author_Institution :
Plessey Research (Caswell) Limited, Allen Clark Research Centre, Towcester, UK
Abstract :
Electron-irradiated silicon photoconductors have been fabricated and characterised for focal-plane array applications. The photoresponse has a peak at 4 ¿m where D¿* values of 2×1010 cm Hz¿W¿1 have been measured at 80 K. These characteristics are maintained to 100 K before thermal generation becomes significant. The devices are stable in processing and storage up to at least 100°C. Since no deep-level chemical dopants are involved, dedicated silicon processing facilities are not required
Keywords :
elemental semiconductors; photodetectors; silicon; 3 to 5 Mu m focal plane arrays; deep-level chemical dopants; electron irradiated extrinsic Si photoconductor; elemental semiconductor; photoresponse;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820148
