DocumentCode
976908
Title
Silicon MOSFET distributed amplifier
Author
Sullivan, P.J. ; Xavier, B.A. ; Costa, D. ; Ku, W.H.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Volume
32
Issue
12
fYear
1996
fDate
6/6/1996 12:00:00 AM
Firstpage
1106
Lastpage
1108
Abstract
The first reported integrated silicon MOSFET distributed amplifier is presented. A three stage distributed amplifier was fabricated on a standard 0.8 μm silicon CMOS foundry process and packaged in a SSO-24 plastic surface mount package. The required inductance needed for distributed amplification is realised by the parasitic inductance of the bond wires and lead frame inductance inside the plastic surface mount package. The distributed amplifier has a unity gain cutoff frequency of 4.7 GHz, a gain of 5 dB and an input referred third order intercept point of +15 dBm
Keywords
CMOS analogue integrated circuits; distributed amplifiers; integrated circuit packaging; plastic packaging; surface mount technology; 0.8 micron; 4.7 GHz; 5 dB; CMOS foundry process; SSO-24 plastic surface mount package; Si; bond wires; cutoff frequency; gain; integrated silicon MOSFET distributed amplifier; intercept point; lead frame; parasitic inductance; three stage amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960699
Filename
502881
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