High-brightness, AlGaInP-based, visible light-emitting diode for efficient coupling with POF

Author

Dutta, Achyut Kumar ; Suzuki, Akira ; Kurihara, Kaori ; Miyasaka, Fumito ; Hotta, Hitoshi ; Sugita, Kotaro

Author_Institution

Opto-Electron. Res. Lab., NEC Corp., Tsukuba, Japan

Volume

7

Issue

10

fYear

1995

Firstpage

1134

Lastpage

1136

Abstract

A high-brightness light-emitting diode (LED) is fabricated using the AlGaInP based quaternary double heterostructure. The ring type electrode is used in the top contact in order to spread the current efficiently and also to enhance the coupling efficiency with the fiber. The fabricated LED has a light output as high as 1.7 mW at the bias current of 100 mA. The far-field radiation divergences are found to be approximately 100 and 70/spl deg/ for the LED´s, with and without molding. These LED´s offer coupling efficiency as high as 70% and 35%, with the step index (SI) plastic optical fiber (POF) after using the molded and hybrid ball lens, respectively. The increases of the coupling efficiency are due to the use of the ring-shaped top electrode, concentrating the emission mostly at the center.<>

Keywords

III-V semiconductors; aluminium compounds; brightness; electrodes; gallium compounds; indium compounds; light emitting diodes; optical fabrication; optical fibre couplers; refractive index; 1.7 mW; 100 mA; 35 percent; 70 percent; AlGaInP; AlGaInP based quaternary double heterostructure; AlGaInP-based; LED; bias current; coupling efficiency; far-field radiation divergence; high-brightness light-emitting diode; hybrid ball lens; light output; ring type electrode; ring-shaped top electrode; step index plastic optical fiber; top contact; Brightness; Costs; Displays; Electrodes; Light emitting diodes; Optical coupling; Optical fiber communication; Optical fibers; Optical interconnections; Plastics;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.466567

Filename

466567